AC CONDUCTION IN SOL-GEL-DERIVED GLASSES IN THE SIO2-AS2O3 SYSTEM
被引:4
作者:
DATTA, A
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机构:Indian Association for the Cultivation of Science, Calcutta 700 032, Jadavpur
DATTA, A
GIRI, AK
论文数: 0引用数: 0
h-index: 0
机构:Indian Association for the Cultivation of Science, Calcutta 700 032, Jadavpur
GIRI, AK
CHAKRAVORTY, D
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h-index: 0
机构:Indian Association for the Cultivation of Science, Calcutta 700 032, Jadavpur
CHAKRAVORTY, D
机构:
[1] Indian Association for the Cultivation of Science, Calcutta 700 032, Jadavpur
来源:
PHYSICAL REVIEW B
|
1992年
/
45卷
/
21期
关键词:
D O I:
10.1103/PhysRevB.45.12222
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
ac-resistivity measurements on sol-gel-derived glasses in the system xAs2O3.(1-x)SiO2 with 0.05 < x < 0.16 have been carried out over the frequency range 2-100 kHz in the temperature range 80-400 K. The ac resistivity for all the glasses shows a sharp minimum at around 317 K. This is ascribed to a change in chemical equilibrium of the ratio [As5+]/[As3+] as a function of temperature. In the temperature range 190-300 K the ac resistivity is shown to arise due to a correlated-barrier-hopping mechanism involving bipolarons. A small fraction of total arsenic sites is found to participate in the hopping conduction. The ac resistivity at temperatures below 190 K shows a frequency exponent s, the variation of which can be qualitatively explained on the basis of the overlapping-large-polaron model.