CHEMICAL BEAM EPITAXY OF GA0.5IN0.5P USING TERTIARYBUTYLPHOSPHINE

High quality Ga0.5In0.5P layers were grown by chemical beam epitaxy (CBE) using tertiarybutylphosphine (TBP) instead of the more conventional phosphine (PH3) gaseous source. It is shown that the use of TBP leads to a significant decrease, by at least one decade, of the carbon incorporation in the epilayers. All-gaseous source CBE GaAs/Ga0.5In0.5P heterojunction bipolar transistors (HBTs) have been grown and characterized for the first time. TBP grown HBT structure exhibit superior DC gain current (beta = 80) when compared with similar PH3 grown structures (beta = 20).