PERTURBATIONS TO THE STONER-WOHLFARTH THRESHOLD IN 2X20-MU-M M-R MEMORY ELEMENTS

被引:7
作者
COMSTOCK, CS [1 ]
YOO, HY [1 ]
POHM, AV [1 ]
机构
[1] IOWA STATE UNIV SCI & TECHNOL,ENGN RES INST,AMES,IA 50011
关键词
D O I
10.1063/1.340215
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:4321 / 4323
页数:3
相关论文
共 2 条
  • [1] 0.075-MU-M, 1.25-MU-M AND 2.0-MU-M WIDE M-R TRANSDUCERS
    POHM, AV
    COMSTOCK, CS
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1986, 54-7 : 1667 - 1669
  • [2] THRESHOLD PROPERTIES OF 1-MU-M, 2-MU-M AND 4-MU-M MULTILAYER MAGNETO-RESISTIVE MEMORY CELLS
    POHM, AV
    DAUGHTON, JM
    COMSTOCK, CS
    YOO, HY
    HUR, J
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (05) : 2575 - 2577