THE THEORETICAL AND EXPERIMENTAL FUNDAMENTALS OF DECREASING DISLOCATIONS IN MELT GROWN GAAS AND INP

[1] ANTONOV PI, 1980, IZV AN SSSR FIZ+, V44, P255

[2] SINGLE CRYSTALS OF EXCEPTIONAL PERFECTION AND UNIFORMITY BY ZONE LEVELING [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 637 - 660

[3] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[4] Brantley W. A., 1973, Proceedings of the 11th Annual Reliability Physics Conference 1973, P267

[5] Brice J. C., 1968, Journal of Crystal Growth, V2, P395, DOI 10.1016/0022-0248(68)90035-3

[6] EFFECT OF ARSENIC PRESSURE ON DISLOCATION DENSITIES IN MELT-GROWN GALLIUM ARSENIDE [J]. NATURE, 1966, 209 (5030) : 1346 - &

[7] INVESTIGATION OF MICROPLASMAS IN INP AVALANCHE PHOTO-DIODES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (03): : 27 - 29

[8] SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI-INSULATING GAAS SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2386 - 2388

[9] EFFECTS OF THERMAL ANNEALING ON SEMI-INSULATING UNDOPED GAAS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2203 - 2209

[10] SILICON CRYSTALS FREE OF DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) : 736 - 737

[1] ANTONOV PI, 1980, IZV AN SSSR FIZ+, V44, P255

[2] SINGLE CRYSTALS OF EXCEPTIONAL PERFECTION AND UNIFORMITY BY ZONE LEVELING [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 637 - 660

[3] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[4] Brantley W. A., 1973, Proceedings of the 11th Annual Reliability Physics Conference 1973, P267

[5] Brice J. C., 1968, Journal of Crystal Growth, V2, P395, DOI 10.1016/0022-0248(68)90035-3

[6] EFFECT OF ARSENIC PRESSURE ON DISLOCATION DENSITIES IN MELT-GROWN GALLIUM ARSENIDE [J]. NATURE, 1966, 209 (5030) : 1346 - &

[7] INVESTIGATION OF MICROPLASMAS IN INP AVALANCHE PHOTO-DIODES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (03): : 27 - 29

[8] SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI-INSULATING GAAS SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2386 - 2388

[9] EFFECTS OF THERMAL ANNEALING ON SEMI-INSULATING UNDOPED GAAS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2203 - 2209

[10] SILICON CRYSTALS FREE OF DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) : 736 - 737