ELECTRONIC STATES OF DOPED HOLES AND MAGNETIC-PROPERTIES IN LA2-XMXCUO4 (M = SR, BA)

被引:55
作者
ODA, M
NAKANO, T
KAMADA, Y
IDO, M
机构
[1] Department of Physics, Faculty of Science, Hokkaido University, Sapporo
来源
PHYSICA C | 1991年 / 183卷 / 4-6期
关键词
D O I
10.1016/0921-4534(91)90567-I
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetic susceptibility-chi and resistivity-rho were examined in La2-xMxCuO4 (M = Sr, Ba). The T-dependent part chi(s) of chi below x congruent-to x(c) (x(c) = 0.15 and 0.18 for M = Ba and Sr) consists of a term arising from antiferromagnetically correlated Cu-spins chi(F)s (T), which is characterized by a broad peak at T(max). On the other hand, chi(s) above x = x(c) consists of chi(F)s (T) and a Curie term (C/T which is small but grows with increasing x. The superconducting transition temperature T(c) decreases rapidly with increasing x above x(c). The relation between T(c) and C can be explained in terms of the magnetic depairing due to local moments. T(max) and the g-value of the Cu-spins are almost constant above x congruent-to 0.2, although these are strongly x-dependent for x < 0.2. This fact suggests that holes doped over the concentration p congruent-to 0.2 go onto electronic states which differ large y in character from those below p congruent-to 0.2. It is also found that a significant change in the rho-T curve occurs at x congruent-to 0.2.
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页码:234 / 240
页数:7
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