LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR

被引：4

作者：

GLEZOS, N

RAPTIS, I

HATZAKIS, M

机构：

[1] Institute of Microelectronics, Aghia Paraskevi Attikis, 15310

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90186-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The simulation tool presented in this paper is used for resist exposure and development in electron beam lithography. The novel feature is that first, the electron distribution function is evaluated from the Boltzmann transport equation which is solved with suitable boundary conditions. Then, the energy deposition function (EDF) necessary in the exposure and development stages, follows. The program has been tested in the case of resist layers on a multi-component substrate for electron beams in the range 10-50KeV and it has been proved much faster than the Monte-Carlo approach.

引用

页码：417 / 420

页数：4

共 8 条

[1]

Glezos, Raptis, Tsoukalas, Hatzakis, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10 B, (1992)

[2]

Hawryluk, Hawryluk, Smith, Journal of Applied Physics, (1974)

[3]

Scott, Phys. Rev., 76, (1949)

[4]

Raptis, Glezos, Hatzakis, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 11 B, (1993)

[5]

Dill, Neureuther, Tuttle, Walker, IEEE Transactions on Electron Devices, 22 ED, (1975)

[6]

Neureuther, Kyser, Ting, IEEE Transactions on Electron Devices, 26 ED, (1979)

[7]

Hatzakis, Stewart, Shaw, Rishton, J. Electrochem. Soc., 138, (1991)

[8]

Tokodoro, IEEE Transactions on Electron Devices, 27 ED, (1980)

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