Comparative analysis of optically pumped intersubband lasers and intersubband Raman oscillators

被引：52

作者：

Khurgin, JB

Sun, G

Friedman, LR

Soref, RA

机构：

[1] UNIV MASSACHUSETTS,DEPT PHYS,BOSTON,MA 02125

[2] USAF,ROME LAB,BEDFORD,MA 01731

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.360391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new tunable source of the far-infrared radiation based on intersubband electronic Raman scattering in semiconductor quantum wells is proposed. The gain and threshold of the proposed Raman oscillator are estimated and compared with the intersubband laser. (C) 1995 American Institute of Physics.

引用

页码：7398 / 7400

页数：3

共 8 条

[1] INELASTIC LIGHT-SCATTERING BY ELECTRONIC EXCITATIONS IN SEMICONDUCTOR HETEROSTRUCTURES [J].