THERMODYNAMIC AND KINETIC-PROPERTIES OF INDIUM-IMPLANTED SILICON .2. HIGH-TEMPERATURE DIFFUSION IN AN INERT ATMOSPHERE

被引:14
作者
CEROFOLINI, GF
FERLA, G
PIGNATEL, GU
RIVA, F
机构
关键词
D O I
10.1016/0040-6090(83)90254-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:275 / 283
页数:9
相关论文
共 14 条
[1]   THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS [J].
ALLEN, JW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :134-&
[2]   INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].
BLOOD, P ;
BROWN, WL ;
MILLER, GL .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182
[3]   THERMODYNAMIC AND KINETIC-PROPERTIES OF INDIUM-IMPLANTED SILICON .1. MODERATE TEMPERATURE RECOVERY OF THE IMPLANT DAMAGE AND METASTABILITY EFFECTS [J].
CEROFOLINI, GF ;
FERLA, G ;
PIGNATEL, GU ;
RIVA, F ;
OTTAVIANI, G .
THIN SOLID FILMS, 1983, 101 (03) :263-273
[4]   ANALYSIS OF PHOSPHORUS-DIFFUSED LAYERS IN SILICON [J].
FAIR, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :323-327
[5]   DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].
FULLER, CS ;
DITZENBERGER, JA .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553
[6]   THEORETICAL-ANALYSIS OF HALL FACTOR AND HALL-MOBILITY IN P-TYPE SILICON [J].
LIN, JF ;
LI, SS ;
LINARES, LC ;
TENG, KW .
SOLID-STATE ELECTRONICS, 1981, 24 (09) :827-833
[7]   PRECIPITATION AS THE PHENOMENON RESPONSIBLE FOR THE ELECTRICALLY INACTIVE PHOSPHORUS IN SILICON [J].
NOBILI, D ;
ARMIGLIATO, A ;
FINETTI, M ;
SOLMI, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1484-1491
[8]   ARSENIC CLUSTERING IN SILICON [J].
SCHWENKER, RO ;
PAN, ES ;
LEVER, RF .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3195-+
[9]  
SCLAR N, 1977, IEEE T ELECTRON DEVI, V6, P709
[10]   SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].
TRUMBORE, FA .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233