ELECTRICAL-CONDUCTIVITY AND DEFECT MODELS OF MGO-DOPED CR2O3

被引：26

作者：

PARK, JS

KIM, HG

机构：

[1] Korea Advanced Inst of Science &, Technology, Seoul, South Korea, Korea Advanced Inst of Science & Technology, Seoul, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1988年 / 71卷 / 03期

关键词：

CERAMIC MATERIALS - Electric Properties - REFRACTORY MATERIALS - Magnesia;

D O I：

10.1111/j.1151-2916.1988.tb05024.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dc electrical conductivity of MgO-doped Cr//2O//3 and the defect models with the defect structure of a sesquioxide were investigated as a function of oxygen partial pressure, temperature, and dopant content. The electrical conductivity of MgO-doped Cr//2O//3 is increased with oxygen partial pressure and temperature. The electrical conductivity of MgO-doped Cr//2O//3 within the solubility limit is increased with MgO content because of the creation of holes and the annihilation of chromium vacancies.

引用

页码：173 / 176

页数：4

共 18 条

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