SEMIEMPIRICAL MODIFIED EMBEDDED-ATOM POTENTIALS FOR SILICON AND GERMANIUM

被引：412

作者：

BASKES, MI

NELSON, JS

WRIGHT, AF

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.40.6085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6085 / 6100

页数：16

共 92 条

[1]

ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6

[2] SELF-DIFFUSION AND IMPURITY DIFFUSION OF FCC METALS USING THE 5-FREQUENCY MODEL AND THE EMBEDDED ATOM METHOD [J].

ADAMS, JB ;

FOILES, SM ;

WOLFER, WG .

JOURNAL OF MATERIALS RESEARCH, 1989, 4 (01) :102-112

[3] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].

APPELBAUM, JA ;

HAMANN, DR .

SURFACE SCIENCE, 1978, 74 (01) :21-33

[4] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].

BACHELET, GB ;

HAMANN, DR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228

[5]

BANDES EA, 1983, SMITHELLS METALS REF

[6] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[7] MIGRATION OF INTERSTITIALS IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469

[8]

Barrett C. S., 1966, STRUCTURE METALS

[9] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852

[10] APPLICATION OF THE EMBEDDED ATOM METHOD TO THE FRACTURE OF INTERFACES [J].

BASKES, MI ;

FOILES, SM ;

DAW, MS .

JOURNAL DE PHYSIQUE, 1988, 49 (C-5) :483-495

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