REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF (111) AND (001) CDTE GROWN ON (001) GAAS BY PULSED LASER EVAPORATION AND EPITAXY

被引：15

作者：

DUBOWSKI, JJ

WILLIAMS, DF

WROBEL, JM

SEWELL, PB

LEGEYT, J

HALPIN, C

TODD, D

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1989年 / 67卷 / 04期

关键词：

D O I：

10.1139/p89-060

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：343 / 346

页数：4

共 17 条

[1]

ALLRED WP, 1987, MATER RES SOC S P, V90, P103

[2] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILES, NC ;

SCHETZINA, JF ;

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[3] ROLE OF ATOMIC TELLURIUM IN THE GROWTH-KINETICS OF CDTE (111) HOMOEPITAXY [J].

CHEUNG, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1940-1942

[4] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[5]

Dubowski J. J., 1988, Chemtronics, V3, P66

[6] GROWTH OF POLYCRYSTALLINE CD3AS2 FILMS ON ROOM-TEMPERATURE SUBSTRATES BY A PULSED-LASER EVAPORATION TECHNIQUE [J].

DUBOWSKI, JJ ;

WILLIAMS, DF .

THIN SOLID FILMS, 1984, 117 (04) :289-297

[7] EPITAXIAL-GROWTH OF (100) CDTE ON (100) GAAS INDUCED BY PULSED LASER EVAPORATION [J].

DUBOWSKI, JJ ;

WILLIAMS, DF ;

SEWELL, PB ;

NORMAN, P .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1081-1083

[8] EJECTION OF NEUTRAL AND CHARGED-PARTICLES FROM CDTE AND CD0.96MN0.04 TE INDUCED BY PULSED LASER IRRADIATION [J].

DUBOWSKI, JJ ;

BHAT, PK ;

WILLIAMS, DF ;

BECLA, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :1879-1883

[9] AUGER-ELECTRON SPECTROSCOPY STUDY OF PULSED-LASER EVAPORATED CDTE-FILMS ON (100) GAAS [J].

DUBOWSKI, JJ ;

MITCHELL, DF ;

SPROULE, GI .

CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) :972-974

[10]

DUBOWSKI JJ, IN PRESS MATER RES S, V131

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