FABRICATION AND OPTICAL-PROPERTIES OF GAAS QUANTUM WIRES AND DOTS BY MOCVD SELECTIVE GROWTH

被引：26

作者：

ARAKAWA, Y ^{[1
]}

NAGAMUNE, Y ^{[1
]}

NISHIOKA, M ^{[1
]}

TSUKAMOTO, S ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MINATO KU,TOKYO 153,JAPAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 06期

关键词：

D O I：

10.1088/0268-1242/8/6/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss fabrication of GaAs quantum wires and quantum dots using an in situ MOCVD selective growth technique on SiO2 patterned substrates, as well as the optical properties of those microstructures. Triangular-shaped GaAs quantum wires with a lateral width of 15 nm were obtained. The photoluminescence (PL) and magneto-PL measurements clearly demonstrate the existence of quantum wire effects in the structures. In addition, measurements of time-resolved spectra indicate a longer carrier lifetime of excitons in the quantum wires compared with that in the quantum wells. Using a similar but slightly different selective growth technique, GaAs dots with a dimension of 25 nm x 25 nm x 12 nm surrounded by AlGaAs regions were prepared.

引用

页码：1082 / 1088

页数：7

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