EFFECTS OF TEMPERATURE ON STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM AND CARBON-SILICON-GERMANIUM ALLOYS

被引:9
作者
BATTEZZATI, L [1 ]
DEMICHELIS, F [1 ]
PIRRI, CF [1 ]
TRESSO, E [1 ]
机构
[1] POLITECN TORINO, DIPARTMENTO FIS, I-10129 TURIN, ITALY
关键词
D O I
10.1063/1.348727
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependence of the structural properties of a-SiGe:H and a-CSiGe:H films has been studied. The samples were characterized by differential scanning calorimetry, conductivity measurements, electron-spin resonance, infrared, optical, and photoacoustic spectroscopy. The disagreement of previous results of differential scanning calorimetry on hydrogenated amorphous semiconductors samples (a-Si:H and a-Ge:H) is examined and discussed. The equilibration temperature determined by the temperature dependence of dc conductivity agrees well with that of the first exothermic process detected with differential calorimetry. The second exothermic effect occurs when hydrogen evolution starts, as confirmed by electron-spin resonance and infrared spectroscopies.
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页码:2029 / 2032
页数:4
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