TRANSIENT-ENHANCED DIFFUSION DURING FURNACE AND RAPID THERMAL ANNEALING OF ION-IMPLANTED SILICON

被引：38

作者：

PENNYCOOK, SJ

NARAYAN, J

HOLLAND, OW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114262

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1962 / 1968

页数：7

共 15 条

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[7] RAPID THERMAL AND PULSED LASER ANNEALING OF BORON FLUORIDE-IMPLANTED SILICON [J].

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[9] ENHANCED DIFFUSION FROM INTERSTITIAL TRAPPING DURING SOLID-PHASE-EPITAXIAL GROWTH OF SILICON ALLOYS [J].

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[10] POINT-DEFECT TRAPPING IN SOLID-PHASE EPITAXIALLY GROWN SILICON-ANTIMONY ALLOYS [J].

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