ON THE 2-DIMENSIONAL AND 3-DIMENSIONAL SIMULATION OF ION-MILLED STRUCTURES

Simulated cross-sectional structure profiles and surface topographies along with confirming experimental results are presented and discussed. A new computer algorithm IBEPM (Ion Beam Etching PrograM) has been developed to model the non-reactive ion beam milling technique in detail. This algorithm uses TRIM generated data related to sputtering yields, as well as direction and energy of reflected ions and ejected target particles. This allows one to model angle- and energy-dependent etching, eroding due to reflected ions and redeposition of sputtered particles taking into account the effect of physical shadowing on final etched topographies. This reduces the need for extensive experimental studies and may pave the way for sophisticated interactive process controls or even future expert system in this field. © 1990.