COMPLEMENTARY CIRCUIT WITH ALGAAS/GAAS HETEROSTRUCTURE MISFETS EMPLOYING HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON AND HOLE GASES

被引:8
作者
MIZUTANI, T
FUJITA, S
YANAGAWA, F
机构
关键词
D O I
10.1049/el:19850793
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1116 / 1117
页数:2
相关论文
共 7 条
[1]  
ARAI K, 1985, UNPUB EXTENDED ABSTR
[2]   PARA-CHANNEL ALGAAS-GAAS HETEROSTRUCTURE FETS EMPLOYING TWO-DIMENSIONAL HOLE GAS [J].
HIRANO, M ;
OE, K ;
YANAGAWA, F .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L868-L870
[3]   COMPLEMENTARY P-MODFET AND N-HB MESFET (AL,GA)AS TRANSISTORS [J].
KIEHL, RA ;
GOSSARD, AC .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :521-523
[4]   A NEW P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET EMPLOYING 2 DIMENSIONAL HOLE GAS [J].
OE, K ;
HIRANO, M ;
ARAI, K ;
YANAGAWA, F .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (05) :L335-L337
[5]  
STORMER HL, 1984, APPL PHYS LETT, V44, P139, DOI 10.1063/1.94580
[6]  
STORMER HL, 1984, APPL PHYS LETT, V44, P1062, DOI 10.1063/1.94643
[7]   P-CHANNEL MODFETS USING GAALAS/GAAS TWO-DIMENSIONAL HOLE GAS [J].
TIWARI, S ;
WANG, WI .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :333-335