SYNTHESIS OF INAS AND INAS1-XSBX FROM ELECTRODEPOSITED LAYERS OF INDIUM, ARSENIC AND AS-SB ALLOY

Electrodeposited arsenic and As-Sb alloys were indium plated and the two-layer samples thus obtained thermally annealed to yield InAs and InAs1-xSbx thin films. The ternary compounds consisted of two phases, the lattice parameters of which were determined by X-ray diffraction analysis. Two deposition sequences were also tested as possible routes to GaAs, but neither was successful, although some GaAs was detected after annealing a two-layer sample obtained by depositing gallium onto nickel and arsenic onto gallium.