A MODFET DC MODEL WITH IMPROVED PINCHOFF AND SATURATION CHARACTERISTICS

被引：68

作者：

ROHDIN, H ^{[1
]}

ROBLIN, P ^{[1
]}

机构：

[1] OHIO STATE UNIV,DEPT ELECT ENGN,COLUMBUS,OH 43210

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期

关键词：

D O I：

10.1109/T-ED.1986.22549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：664 / 672

页数：9

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