CARRIER DYNAMICS AND RECOMBINATION MECHANISMS IN STAGGERED-ALIGNMENT HETEROSTRUCTURES

The experimental and theoretical work on carrier dynamics and recombination mechanisms in semiconductor heterostructures with staggered type II alignments is reviewed. Examples from the literature are discussed for each of the III-V, II-VI, and IV-VI systems, as well as cross-column examples, with a focus on AlGaAs structures. The key optical properties which have benn identified as signatures of staggered-alignment behavior are summarized. A discussion of other epitaxial systems likely to exhibit staggered lineups is presented, and additional experimental and theoretical work is suggested, which could increase understanding of staggered-system behavior.