AR ION-BEAM ETCHING OF GADOLINIUM-GALLIUM GARNET

被引：6

作者：

KATOH, Y

SUGIMOTO, N

TATE, A

SHIBUKAWA, A

机构：

[1] NTT Opto-Electronics Laboratories, 319-11, Tokai

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 01期

关键词：

ION-BEAM ETCHING; GARNET; WAVE-GUIDE; OPTICAL ISOLATOR;

D O I：

10.1143/JJAP.31.141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An argon ion-beam etching technique is used to process a Gd3Ga5O12 substrate. A double-layered mask consisting of a Ta film and a photoresist shows good tolerance for the Ar-ion beam during etching. An etching depth sufficient for preparing waveguides is obtained.

引用

页码：141 / 142

页数：2

共 5 条

[1] WAVE-GUIDE MAGNETO-OPTIC ISOLATOR FABRICATED BY LASER ANNEALING [J].