EFFECT OF BASE DOPANTS ON THE BIAS STRESS STABILITY OF ALGAAS/GAAS HBTS

被引：8

作者：

AHMAD, T ^{[1
]}

REZAZADEH, AA ^{[1
]}

GILL, SS ^{[1
]}

机构：

[1] DEF RES AGCY MALVERN,GREAT MALVERN WR14 3PS,WORCS,ENGLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 19期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; HBTS; TRANSISTORS;

D O I：

10.1049/el:19931147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thee effect of three base dopants C, Be and Zn on the bias stress stability of npn AlGaAs/GaAs HBTs has been investigated for the first time. In this study 3 x 30mum2 HBTs were fabricated under identical process technology, emitter-base geometry and layout design. Following 24 h of identical bias stress, it is found that both Be- and Zn-doped devices exhibited current gain degradation as high as 68 and 57%, respectively, compared with only 7% for the C-doped device. The superior bias stress stability of C-doped HBTs is demonstrated.

引用

页码：1725 / 1726

页数：2

共 6 条

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