HIGH-FIELD MAGNETORESISTANCE IN SMB6

被引：8

作者：

LACERDA, A

RICKEL, D

HUNDLEY, MF

CANFIELD, PC

THOMPSON, JD

FISK, Z

HAEN, P

LAPIERRE, F

机构：

[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

[2] CNRS,CRTBT,F-38042 GRENOBLE 9,FRANCE

来源：

PHYSICA B | 1994年 / 199卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0921-4526(94)91871-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured the transverse magnetoresistance (B perpendicular-to I) at T = 4 K of a high quality single crystal of SmB6 in magnetic fields up to 50 T. A relatively large negative transverse magnetoresistance of about 45% at 50 T is observed. The negative transverse magnetoresistance is quadratic in field up to the highest field applied. The effect of high magnetic field on the gap formation of this material will also be discussed.

引用

页码：469 / 470

页数：2

共 6 条

[1]

HAEN P, COMMUNICATION

[2] MAGNETORESISTANCE OF THE KONDO INSULATOR CE3BI4PT3 [J].

HUNDLEY, MF ;

LACERDA, A ;

CANFIELD, PC ;

THOMPSON, JD ;

FISK, Z .

PHYSICA B-CONDENSED MATTER, 1993, 186-88 :425-427

[3] MECHANISMS FOR ANOMALOUS PROPERTIES IN SMB6 [J].

KASUYA, T ;

KASAYA, M ;

TAKEGAHARA, K ;

FUJITA, T ;

GOTO, T ;

TAMAKI, A ;

TAKIGAWA, M ;

YASUOKA, H .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1983, 31-4 (FEB) :447-450

[4]

Kasuya T., 1977, VALENCE INSTABILITIE

[5]

SANCHEZCASTRO C, PREPRINT

[6]

THOMPSON JD, 1993, TRANSPORT THERMAL PR

← 1 →