BETA-BAB2O4 SINGLE-CRYSTAL GROWTH BY CZOCHRALSKI METHOD .2.

被引:66
作者
KOUTA, H [1 ]
KUWANO, Y [1 ]
ITO, K [1 ]
MARUMO, F [1 ]
机构
[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,YOKOHAMA,KANAGAWA 227,JAPAN
关键词
D O I
10.1016/0022-0248(91)90415-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The development of a Czochralski technique for the growth of high quality single crystals of beta-BaB2O4 is reported. The beta phase crystal could be directly grown from a BaB2O4 composition melt without flux elements, although the beta-phase is metastable. The size of the grown crystal was extended to 15 mm in diameter and 40 mm in length. Neither cracks nor inclusions were observed. The effects of the preparation method of the starting material and the crystal growth conditions for obtaining the beta phase single crystal were investigated. The relation between the beta-phase nucleation and the interfacial energy was discussed.
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页码:676 / 682
页数:7
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