RESONANCE-ENHANCED MULTIPHOTON IONIZATION DETECTION OF SIO DESORBING FROM A SI(111) SURFACE IN REACTION WITH O-2

被引：3

作者：

NAKAMURA, KG

KITAJIMA, M

机构：

[1] National Research Institute for Metals, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 19期

关键词：

D O I：

10.1063/1.112702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiO molecule desorbing from Si(111) surface in reaction with pulse O-2 molecular beam at the substrate temperature of 1250 +/- 50 K is measured with the 2+1 resonance enhanced multiphoton ionization. Vibrationally separated spectrum of the desorbing SiO molecule has been observed. The observed vibrational distribution is estimated to be in equilibrium with the surface temperature. (C) 1994 American Institute of Physics.

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页码：2445 / 2447

页数：3

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