Device quality of in situ plasma cleaning for silicon molecular beam epitaxy

被引：4

作者：

Hansch, W

Eisele, I

Kibbel, H

Konig, U

Ramm, J

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSZENTRUM,D-89081 ULM,GERMANY

[2] BALZERS AG,FL-9496 BALZERS,LIECHTENSTEIN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00394-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Different substrate cleaning procedures were used before fabrication of pin diodes by silicon molecular beam epitaxy (MBE). We investigated the quality of these diodes in order to demonstrate the superior quality of in situ low energy plasma cleaning in ultra-high vacuum (UHV). The plasma-cleaned substrates can be transported through air and processed in another MBE chamber without any additional cleaning steps. Moreover, the deposited layers are stable to high-temperature treatment (900 degrees C) without any degradation effects in device quality.

引用

页码：100 / 104

页数：5

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