ELECTRICAL-PROPERTIES OF GATEXSE1-X CRYSTALS

被引:15
作者
GOUSKOV, L [1 ]
GOUSKOV, A [1 ]
LEMOS, V [1 ]
MAY, W [1 ]
SAMPAIO, H [1 ]
机构
[1] UNICAMP, INST FIS GLEB WATAGHIN, CAMPINAS, BRAZIL
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1977年 / 39卷 / 01期
关键词
D O I
10.1002/pssa.2210390106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:65 / 71
页数:7
相关论文
共 20 条
  • [1] BREBNER JL, 1968, HELV PHYS ACTA, V41, P710
  • [2] CERDEIRA F, TO BE PUBLISHED
  • [3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
    DEBYE, PP
    CONWELL, EM
    [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
  • [4] ELECTRICAL RESISTIVITY AND HALL EFFECT OF SINGLE CRYSTALS OF GATE AND GASE
    FISCHER, G
    BREBNER, JL
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1363 - &
  • [5] ELECTRON-PHONON INTERACTION IN SEMICONDUCTING LAYER STRUCTURES
    FIVAZ, R
    MOOSER, E
    [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A): : A833 - &
  • [6] FIVAZ R, 1966, HELV PHYS ACTA, V39, P247
  • [7] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES
    FIVAZ, R
    MOOSER, E
    [J]. PHYSICAL REVIEW, 1967, 163 (03): : 743 - &
  • [8] Karaman M. I., 1969, Fizika i Tekhnika Poluprovodnikov, V3
  • [9] Karaman M. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P783
  • [10] ATOMIC-STRUCTURE OF A 4H GASE POLYTYPE NAMED DELTA-TYPE
    KUHN, A
    CHEVALIER, R
    RIMSKY, A
    [J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1975, 31 (DEC15): : 2841 - 2842