LOCALIZATION IN GAAS ELECTRON-DOTS AND ANTI-DOTS

被引：59

作者：

LORKE, A ^{[1
]}

KOTTHAUS, JP ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 01期

关键词：

D O I：

10.1016/0749-6036(91)90102-W

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

On GaAsAlGaAs heterostructures we have prepared a two-dimensionally modulated electron gas as well as arrays of quantum dots and anti-dots. In the far-infrared response quantum dots show the typical two-mode behavior characteristic for electron systems confined in all spatial dimensions under the influence of a magnetic field. The upper of these modes can also be observed in anti-dot arrays which indicates that localization takes place in magnetic fields in these systems, too. In transport measurements on anti-dots we observe a magnetoresistance maximum at low magnetic fields. It is interpreted as due to reduced diffusion in the superlattice when the cyclotron diameter matches the grating constant of the anti-dot array. © 1991.

引用

页码：103 / 106

页数：4

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