FOURFOLD ANISOTROPY AND STRUCTURAL BEHAVIOR OF EPITAXIAL HCP CO/GAAS(001) THIN-FILMS

被引：40

作者：

GU, E ^{[1
]}

GESTER, M ^{[1
]}

HICKEN, RJ ^{[1
]}

DABOO, C ^{[1
]}

TSELEPI, M ^{[1
]}

GRAY, SJ ^{[1
]}

BLAND, JAC ^{[1
]}

BROWN, LM ^{[1
]}

THOMSON, T ^{[1
]}

RIEDI, PC ^{[1
]}

机构：

[1] UNIV ST ANDREWS,DEPT PHYS & ASTRON,ST ANDREWS KY16 9SS,FIFE,SCOTLAND

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.52.14704

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin Cr-capped Co films (thickness 50-150 Angstrom) have been grown epitaxially on GaAs(001) single-crystal substrates by molecular-beam epitaxy. In contrast to other investigations, transmission electron diffraction reveals that the epitaxial Co films have a hexagonal-close-packed (hcp) structure with the epitaxial relationships ((1) over bar 2 (1) over bar 0)[0001]Co parallel to(001)[110]GaAs and ((1) over bar 2 (1) over bar 0)[0001]Co parallel to(001)[(1) over bar 10]GaAs, i.e., the c axis of each crystallite is assigned to either the in-plane [110] or the [<(1)over bar10] direction of the GaAs(001) substrate. In-plane magneto-optical Kerr-effect hysteresis loops and Brillouin light-scattering measurements show that the thinnest epitaxial hcp Co film (50 Angstrom) has a dominant fourfold anisotropy with easy axes along the in-plane [100] directions and that a uniaxial anisotropy becomes dominant with increasing film thickness. We are able to account for the magnetic anisotropy properties of these epitaxial Co films in terms of their oriented hcp microstructure.

引用

页码：14704 / 14708

页数：5

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