A TEM STUDY OF THE INTERACTION OF SUBTHRESHOLD ELECTRON-BEAM INDUCED DEFECTS IN II-VI COMPOUNDS

被引：6

作者：

LOGINOV, YY ^{[1
]}

BROWN, PD ^{[1
]}

THOMPSON, N ^{[1
]}

机构：

[1] UNIV DURHAM,SCH ENGN & APPL SCI,APPL PHYS GRP,DURHAM DH1 3LE,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 127卷 / 01期

关键词：

D O I：

10.1002/pssa.2211270108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nature and density of secondary microstructural defects produced within 100 keV electron beam irradiated CdTe, ZnS, and ZnSe is shown to be independent of intensity and only dependent on total flux, while the rate of defect formation increases linearly with increasing beam intensity. The susceptibility to both ion milling and electron beam irradiation damage varies in order ZnS > ZnSe > CdTe. An estimate of the time for charge relaxation of a multiple ionised CdTe anion is (2 to 6) x 10(-14) s. The interaction of generated point defects with native dislocations leads to the production of dipole structures.

引用

页码：75 / 86

页数：12

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