FERMI-LEVEL PINNING AND SURFACE-STATE BAND-STRUCTURE OF THE SI(111)-(SQUARE-ROOT-OF-3XSQUARE-ROOT-OF-3) R30-DEGREES-AG SURFACE

被引:124
作者
JOHANSSON, LSO
LANDEMARK, E
KARLSSON, CJ
UHRBERG, RIG
机构
关键词
D O I
10.1103/PhysRevLett.63.2092
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2092 / 2095
页数:4
相关论文
共 21 条
[1]   AN OPTIMIZED BEAM LINE AND EXPERIMENTAL STATION FOR ANGLE RESOLVED PHOTOEMISSION BETWEEN 5 EV LESS-THAN-OR-EQUAL-TO HV LESS-THAN-OR-EQUAL-TO 50 EV [J].
FELDMANN, CA ;
ENGELHARDT, R ;
PERMIEN, T ;
KOCH, EE ;
SAILE, V .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 208 (1-3) :785-789
[2]   NEW MODELS FOR METAL-INDUCED RECONSTRUCTIONS ON SI(111) [J].
HANSSON, GV ;
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P .
PHYSICAL REVIEW LETTERS, 1981, 46 (15) :1033-1037
[3]   FINAL-STATE SYMMETRY AND POLARIZATION EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY [J].
HERMANSON, J .
SOLID STATE COMMUNICATIONS, 1977, 22 (01) :9-11
[4]   DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES [J].
HIMPSEL, FJ ;
HOLLINGER, G ;
POLLAK, RA .
PHYSICAL REVIEW B, 1983, 28 (12) :7014-7018
[5]   ANGLE RESOLVED PHOTOEMISSION MEASUREMENTS ON AG-SI(111) 7X7 INTERFACES [J].
HOUZAY, F ;
GUICHAR, GM ;
CROS, A ;
SALVAN, F ;
PINCHAUX, R ;
DERRIEN, J .
SURFACE SCIENCE, 1983, 124 (01) :L1-L8
[6]   LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].
ISHIZAKA, A ;
SHIRAKI, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671
[7]   X-RAY PHOTOELECTRON DIFFRACTION STUDY OF THE ATOMIC GEOMETRY OF THE SI(111) SQUARE-ROOT3 X SQUARE-ROOT3-AG SURFACE [J].
KONO, S ;
HIGASHIYAMA, K ;
SAGAWA, T .
SURFACE SCIENCE, 1986, 165 (01) :21-36
[8]   SURFACE AND BULK CORE-LEVEL SHIFTS OF THE SI(111) SQUARE-ROOT-3 X SQUARE-ROOT-3-AG SURFACE - EVIDENCE FOR A CHARGED SQUARE-ROOT-3 X SQUARE-ROOT-3 LAYER [J].
KONO, S ;
HIGASHIYAMA, K ;
KINOSHITA, T ;
MIYAHARA, T ;
KATO, H ;
OHSAWA, H ;
ENTA, Y ;
MAEDA, F ;
YAEGASHI, Y .
PHYSICAL REVIEW LETTERS, 1987, 58 (15) :1555-1558
[9]  
KONO S, COMMUNICATION