PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT AT THE NICKEL-SILICIDE SILICON INTERFACE

被引：9

作者：

SHEN, TH

MATTHAI, CC

机构：

[1] Dept. of Phys., Univ. of Wales, Coll. of Cardiff

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 05期

关键词：

D O I：

10.1088/0953-8984/3/5/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have calculated the pressure coefficients of the silicon band gap and the Schottky barrier height at the NiSi2/Si interface. The results are in very good agreement with experiment and suggest that this system is described by a metal-induced gap states model.

引用

页码：613 / 615

页数：3

共 7 条

[1]

NIELSEN OH, 1987, PROPERTIES SILICON, P12

[2] ELECTRONIC-STRUCTURE OF SI(111)-NISI2(111) A-TYPE AND B-TYPE INTERFACES [J].