EXPERIMENTAL-EVIDENCE FOR 400-MEV VALENCE-BAND DISPERSION IN SOLID C-60

被引:64
作者
GENSTERBLUM, G
PIREAUX, JJ
THIRY, PA
CAUDANO, R
BUSLAPS, T
JOHNSON, RL
LELAY, G
ARISTOV, V
GUNTHER, R
TALEBIBRAHIMI, A
INDLEKOFER, G
PETROFF, Y
机构
[1] UNIV HAMBURG,INST EXPTL PHYS 2,D-22761 HAMBURG,GERMANY
[2] CTR RECH MECANISMES CROISSANCE CRISTALLINE,F-13288 MARSEILLE 9,FRANCE
[3] CTR UNIV PARIS SUD,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 19期
关键词
D O I
10.1103/PhysRevB.48.14756
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Angle-resolved electron distribution curves have been measured for two different excitation energies on heteroepitaxial C60(111) films. At HBARomega = 29 eV, the limited k(parallel-to) resolution together with broadening induced by vibronic excitations results in a weak dependence of the peak positions and line shapes of the photoemission features on the emission angle. We demonstrate that at the low photon energy of HBARomega = 8.1 eV the k(parallel-to) resolution becomes sufficient to resolve two bands in the feature derived from the highest-occupied molecular orbital which show a dispersion of the order of 400 meV.
引用
收藏
页码:14756 / 14759
页数:4
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