SILICON SOLAR-CELL WITH A NOVEL LOW-RESISTANCE EMITTER STRUCTURE

被引：4

作者：

BORDEN, PG

WALSH, RV

机构：

来源：

关键词：

D O I：

10.1063/1.93636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：649 / 651

页数：3

共 8 条

[1]

CHAPPEL TI, 1978, 13TH PHOT SPEC C, P1978

[2]

Frank R. I., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P423

GREGORY, PE ;

BORDEN, PG ;

LUDOWISE, MJ ;

OWEN, RJ ;

KAMINAR, N ;

LARUE, RA ;

BOETTCHER, RJ .

SOLAR CELLS, 1982, 6 (01) :103-118

[4] ETCHING VERY NARROW GROOVES IN SILICON [J].

KENDALL, DL .

[5]

Khemthong S., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P126

[6]

Nasby R. D., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P132

[7]

Schwartz R J, 1977, IEEE T ELECTRON DEV, V24, P337

[8]

SCHWARTZ RJ, 1982, 8TH PHOT CONC TECH P, P14