HOT-ELECTRON HARDENED SI-GATE MOSFET UTILIZING F-IMPLANTATION - COMMENT

被引：4

作者：

WRIGHT, PJ

SARASWAT, KC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 08期

关键词：

D O I：

10.1109/55.31769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：397 / 397

页数：1

共 7 条

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GILLEN, KT .

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[2]

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[3]

Morita M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P144

[4] LOW-TEMPERATURE SIO2 GROWTH USING FLUORINE-ENHANCED THERMAL-OXIDATION [J].

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ARITOME, S ;

TSUKUDE, M ;

MURAKAWA, T ;

HIROSE, M .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :253-255

[5] FLUORINE-ENHANCED THERMAL-OXIDATION OF SILICON IN THE PRESENCE OF NF3 [J].

MORITA, M ;

KUBO, T ;

ISHIHARA, T ;

HIROSE, M .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1312-1314

[6] DRAMATIC IMPROVEMENT OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS STRUCTURES CONTAINING F OR CL IN SIO2 [J].

NISHIOKA, Y ;

DASILVA, EF ;

WANG, Y ;

MA, TP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :38-40

[7]

WRIGHT PJ, 1987, IEDM TECH DIG, P574

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