RESULTS ON RADIATION HARDNESS OF SILICON DETECTORS UP TO NEUTRON FLUENCES OF 10(15) N/CM(2)

被引：72

作者：

WUNSTORF, R

BENKERT, M

CLAUSSEN, N

CROITORU, N

FRETWURST, E

LINDSTROM, G

SCHULZ, T

机构：

[1] I. Institut für Experimentalphysik, Universität, Hamburg

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 315卷 / 1-3期

关键词：

D O I：

10.1016/0168-9002(92)90696-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Our ongoing investigations of the radiation hardness for silicon detectors have been extended to neutron fluences up to 10(15) n/cm2. Emphasis was put on the damage induced change of the effective impurity concentration and its related room temperature annealing. The consequences for measurements of the bulk generation current are studied. While most results have been obtained for detectors irradiated without bias first damage experiments under operating conditions exhibit an additional effect attributed to the SiO2-Si interface.

引用

页码：149 / 155

页数：7

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