ION SURFACE INTERACTION STUDIES WITH 1-3 KEV/AMU IONS UP TO TH80+

被引:62
作者
SCHNEIDER, DH
BRIERE, MA
MCDONALD, J
BIERSACK, J
机构
[1] High Temperature Physics Division Lawrence Livermore National Laboratory, Livermore
[2] Hahn-Meitner-Institute, Berlin, FRG, 30
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 127卷 / 02期
关键词
HIGH CHARGE STATES; ION SURFACE INTERACTION; STOPPING POWER; SURFACE DEFECTS;
D O I
10.1080/10420159308220308
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
First results from a series of experiments aimed at the study of the interaction of slow very highly charged ions with conductor and insulator surfaces are reported. Charge state dependences of secondary electron, x-ray and secondary ion emission are measured. In addition, microscopic studies are performed using an 'Atomic Force Microscope' to investigate surface defects, produced through the stored electrostatic potential of the incident ion. The ions that have been used for these studies range from 0(7+) to Th80+, with low kinetic energies (generally 1-3 keV/amu). Overall, enhancement of the low energy secondary electron, sputter ion and photon emission are observed with increasing charge states. Saturation in the electron emission yield at very low velocities confirm present models for image charge acceleration effects. X-ray emission spectra are found to be consistent with the formation of so called 'hollow' atoms near the surface during the neutralization processes. The microscopic studies reveal interesting nano-size surface defects caused by the incidence of individual highly charged ions.
引用
收藏
页码:113 / 136
页数:24
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