EIGENSCHAFTEN GEWOHNLICHER HALBLEITEROBERFLACHEN

[1] ALBERS WA, 1958, B AM PHYS SOC, V3, P219

[2] ALLEN F, 1955, 236 HARV U CRUFT LAB

[3] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[4] THE DEPTH OF SURFACE DAMAGE PRODUCED BY LAPPING GERMANIUM MONOCRYSTALS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1957, 8 (07): : 302 - 303

[5] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[6] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[7] BARDEEN J, 1954 AMST C BER AINF, P873

[8] HILLOCKS, PITS, AND ETCH RATE IN GERMANIUM CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1236 - 1241

[9] BATTERMAN BW, 1958, J APPL PHYS, V29, P233

[10] BECHERER H, 1956, NACHRICHTECHN FACHBE, P5

[1] ALBERS WA, 1958, B AM PHYS SOC, V3, P219

[2] ALLEN F, 1955, 236 HARV U CRUFT LAB

[3] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[4] THE DEPTH OF SURFACE DAMAGE PRODUCED BY LAPPING GERMANIUM MONOCRYSTALS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1957, 8 (07): : 302 - 303

[5] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231

[6] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[7] BARDEEN J, 1954 AMST C BER AINF, P873

[8] HILLOCKS, PITS, AND ETCH RATE IN GERMANIUM CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1236 - 1241

[9] BATTERMAN BW, 1958, J APPL PHYS, V29, P233

[10] BECHERER H, 1956, NACHRICHTECHN FACHBE, P5