SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER JUNCTIONS BY SCANNING-TUNNELING-MICROSCOPY

被引：23

作者：

SCHONENBERGER, C

VANHOUTEN, H

KERKHOF, JM

DONKERSLOOT, HC

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED SURFACE SCIENCE | 1993年 / 67卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90316-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

Ultrasmall (less than or similar to 5 nm in lateral diameter) double-barrier tunnel junctions have been realized using a scanning tunneling microscope and an optimized metal-particle-oxide-metallic substrate system. The effects of single-electron charging (single-electron tunneling) on the current-voltage characteristics are studied experimentally at 4.2 K. The circumstances under which a Coulomb staircase is observable for this kind of model systems is investigated systematically, using the orthodox theory of single-electron tunneling to analyze the data.

引用

页码：222 / 227

页数：6

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[2]

AVERIN DV, 1992, SINGLE ELECTRON TUNN

[3]

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