STRUCTURAL EFFECTS ON A SUB-MICRON TRENCH PROCESS

被引：63

作者：

CHIN, DJ

DHONG, SH

LONG, GJ

机构：

来源：

关键词：

D O I：

10.1149/1.2114195

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1705 / 1707

页数：3

共 7 条

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COBURN, JW
WINTERS, HF
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[2] Hayasaka A., 1982, International Electron Devices Meeting. Technical Digest, P62
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[4] Rung R. D., 1982, International Electron Devices Meeting. Technical Digest, P237
[5] Sunami H., 1982, International Electron Devices Meeting. Technical Digest, P806
[6] Sze S.M., 1983, VLSI TECHNOLOGY, V2nd
[7] Tang D. D., 1982, ISSCC, P242