PLASTIC-FLOW INDUCED BY IONIZATION PROCESSES IN ION-DAMAGED MGO

被引：11

作者：

BRENIER, R ^{[1
]}

CANUT, B ^{[1
]}

GEA, L ^{[1
]}

RAMOS, SMM ^{[1
]}

THEVENARD, P ^{[1
]}

RANKIN, J ^{[1
]}

ROMANA, L ^{[1
]}

BOATNER, LA ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB, OAK RIDGE, TN 37831 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90768-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The change in mechanical properties induced by ionizing radiation in pre-implanted MgO single crystals has been investigated by surface-strain measurements and defect characterization. Optically polished, oriented MgO substrates were implanted with 500 keV Xe+ ions followed by 2 MeV He+ ion bombardment at fluences up to 1.5 x 10(16) He+/cm2. In order to use RBS to study the atomic migration accompanying the strain, some MgO samples were implanted with 150 keV Ca+ ''marker'' ions and were then irradiated with 2 MeV He+ ions. The defects induced in the material were analyzed before and after each type of irradiation by using RBS channeling and optical absorption. It appears that the ionizing radiation induces an out-of-plane strain composed of a volume expansion and a plastic flow which relax the stress in the pre-implanted layer. No long-range atomic migration appears to be involved in this effect.

引用

页码：1210 / 1214

页数：5

共 11 条

[1] ATOMIC DISPLACEMENT AND IONIZATION EFFECTS ON OPTICAL-ABSORPTION AND STRUCTURAL-PROPERTIES OF ION-IMPLANTED AL2O3 [J].