SI ADATOM BINDING AND DIFFUSION ON THE SI(100) SURFACE - COMPARISON OF AB-INITIO, SEMIEMPIRICAL AND EMPIRICAL POTENTIAL RESULTS

被引:67
作者
SMITH, AP
WIGGS, JK
JONSSON, H
YAN, H
CORRALES, LR
NACHTIGALL, P
JORDAN, KD
机构
[1] UNIV WASHINGTON, DEPT MAT SCI & ENGN, SEATTLE, WA 98195 USA
[2] PACIFIC NW LAB, MOLEC SCI RES CTR, RICHLAND, WA 99352 USA
[3] UNIV PITTSBURGH, DEPT CHEM, PITTSBURGH, PA 15260 USA
关键词
D O I
10.1063/1.469453
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The binding energies and configurations for single Si adatoms on the Si(100) surface are investigated theoretically. Detailed comparisons between previously published and new calculations using classical potentials, semiempirical formulations, and density functional theory (DFT) are made. The DFT calculations used both the plane-wave-pseudopotential approach in a periodic slab geometry and the Gaussian-orbital based all-electron approach employing cluster geometries. In the local-density approximation excellent agreement between the cluster and slab results was obtained. Inclusion of gradient corrections to the exchange-correlation energy significantly improves absolute binding energies and changes relative energies by as much as 0.3-0.5 eV depending on the particular exchange-correlation functional used. Binding energies and relative energies obtained using the classical potentials disagree with the gradient corrected DFT energies at about the 0.6-0.9 eV level, and most find qualitatively different local minima from those found in the DFT calculations. The semiempirical approaches give results intermediate in quality between those of the classical potentials and the ab initio calculations. Analysis of the energies and binding site geometries provides insight into the shortcomings of some of the classical potentials. © 1995 American Institute of Physics.
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页码:1044 / 1056
页数:13
相关论文
共 67 条
[1]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[2]   COMPARATIVE-STUDY OF SILICON EMPIRICAL INTERATOMIC POTENTIALS [J].
BALAMANE, H ;
HALICIOGLU, T ;
TILLER, WA .
PHYSICAL REVIEW B, 1992, 46 (04) :2250-2279
[3]   DENSITY-FUNCTIONAL THERMOCHEMISTRY .3. THE ROLE OF EXACT EXCHANGE [J].
BECKE, AD .
JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (07) :5648-5652
[4]   DENSITY-FUNCTIONAL EXCHANGE-ENERGY APPROXIMATION WITH CORRECT ASYMPTOTIC-BEHAVIOR [J].
BECKE, AD .
PHYSICAL REVIEW A, 1988, 38 (06) :3098-3100
[5]   COMPLEX TETRAHEDRAL STRUCTURES OF SILICON AND CARBON UNDER PRESSURE [J].
BISWAS, R ;
MARTIN, RM ;
NEEDS, RJ ;
NIELSEN, OH .
PHYSICAL REVIEW B, 1984, 30 (06) :3210-3213
[6]   INTERATOMIC POTENTIAL FOR SILICON CLUSTERS, CRYSTALS, AND SURFACES [J].
BOLDING, BC ;
ANDERSEN, HC .
PHYSICAL REVIEW B, 1990, 41 (15) :10568-10585
[7]   BINDING AND DIFFUSION OF A SI ADATOM ON THE SI(100) SURFACE [J].
BROCKS, G ;
KELLY, PJ ;
CAR, R .
PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1729-1732
[8]   UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J].
CAR, R ;
PARRINELLO, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (22) :2471-2474
[9]  
CARLSSON AE, 1990, SOLID STATE PHYSICS, V43
[10]   SOLID-SOLID PHASE-TRANSITIONS AND SOFT PHONON MODES IN HIGHLY CONDENSED SI [J].
CHANG, KJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1985, 31 (12) :7819-7826