ANALYSIS OF SEMICONDUCTOR PARA JUNCTIONS AND JUNCTION DEVICES BY A FLUX METHOD

被引：10

作者：

MCKELVEY, JP

机构：

来源：

关键词：

D O I：

10.1063/1.1777203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：985 / &

共 6 条

[1] PHYSICAL PROPERTIES OF CALCIUM TUNGSTATE X-RAY SCREENS [J].

COLTMAN, JW ;

EBBIGHAUSEN, EG ;

ALTAR, W .

[2]

Fletcher N.H., 1957, J ELECT, V2, P609, DOI [10.1080/00207215708937064, DOI 10.1080/00207215708937064]

MCKELVEY, JP ;

BRODY, TP ;

LONGINI, RL .

PHYSICAL REVIEW, 1961, 123 (01) :51-&

MCKELVEY, JP ;

LONGINI, RL .

[5]

Shockley W., 1950, ELECTRONS HOLES SEMI, P309

[6]

SPENKE E, 1958, ELECTRONIC SEMICONDU, P97