BEWEGLICHKEIT VON HEISSEN LADUNGSTRAGERN IN GERMANIUM BEI EINER GITTERTEMPERATUR VON 300-DEGREES-K

被引：9

作者：

SANCHEZ, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1963年 / 6卷 / 02期

关键词：

D O I：

10.1016/0038-1101(63)90013-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：183 / 191

页数：9

共 16 条

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