NOISE PERFORMANCE OF MICROWAVE TRANSISTORS

被引:56
作者
FUKUI, H
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D O I
10.1109/T-ED.1966.15689
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:329 / &
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  • [1] BOOTHROYD AR, 1963, IRE T ELECTRON DEVIC, VED10, P149
  • [2] CHENETTE ER, 1960, P IRE, V48, P111
  • [3] CHENETTE ER, 1959, P IRE, V47, P448
  • [4] CHENETTE ER, 1962, IREE T ELECTRON DEVI, VED 9, P123
  • [5] CHENETTE ER, 1964, SOLID STATE DESIGN, V5, P27
  • [6] A WIDE-BAND LOW NOISE L-BAND BALANCED TRANSISTOR AMPLIFIER
    ENGELBRE.RS
    KUROKAWA, K
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 237 - &
  • [7] FUKUI H, TO BE PUBLISHED
  • [8] FUKUI H, UNPUBLISHED
  • [9] GIACOLETTO LJ, 1956, NOISE FACTOR JUNCTIO, P296
  • [10] THEORY AND EXPERIMENTS ON SHOT NOISE IN SEMICONDUCTOR JUNCTION DIODES AND TRANSISTORS
    GUGGENBUEHL, W
    STRUTT, MJO
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 839 - 854