TERRACING IN HGCDTE LPE FILMS GROWN FROM TE SOLUTION

被引：20

作者：

PARKER, SG

WEIRAUCH, DF

CHANDRA, D

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90714-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：173 / 182

页数：10

共 12 条

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