MBE GROWTH OF FERROMAGNETIC (MN,NI)AL THIN-FILMS ON ALAS/GAAS

被引：9

作者：

HARBISON, JP ^{[1
]}

SANDS, T ^{[1
]}

DEBOECK, J ^{[1
]}

CHEEKS, TL ^{[1
]}

MICELI, P ^{[1
]}

TANAKA, M ^{[1
]}

FLOREZ, LT ^{[1
]}

WILKENS, BJ ^{[1
]}

GILCHRIST, HL ^{[1
]}

KERAMIDAS, VG ^{[1
]}

机构：

[1] IMEC,B-3001 LOUVAIN,BELGIUM

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90703-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We describe the coherent epitaxy of MnNiAl fenomagnetic thin films on AlAs/GaAs heterostructures using molecular beam epitaxy. The epitaxy helps to stabilize the tau phase, which is known to be a metastable ferromagnetic phase with a tetragonal lattice. The easy axis of the ferromagnetic thin film is oriented perpendicular to the surface as a consequence of the coherent epitaxy. The results of structural and magnetic analysis are given for thin MnxAl1-x films with 0.40 < x < 0.60. We have further assessed the change in structural and magnetic properties of the thin films when Ni is added as a substitution for Mn in Mn0.60-yNiyAl0.40, with 0 < y < 0.18. We find that coherent epitaxy is obtained over these wide compositional ranges and that the change in magnetic properties using various Ni additions adds a degree of freedom in the design of ferromagnetic thin layers on AlAs/GaAs for future device structures.

引用

页码：650 / 654

页数：5

共 11 条

[1] ELECTRONIC STRUCTURES OF A2Y4 MOLECULES [J].