TRANSVERSE-MODE CHARACTERISTICS OF INGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS CONSIDERING GAIN OFFSET

被引：14

作者：

KANEKO, Y

TAMANUKI, T

KATOH, M

MAEKAWA, H

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Nagatsuta Campus, Precision and Intelligence Laboratory, Midori-ku, Yokohama-shi, 227

[2] Hewlett-Packard Laboratories Japan, Takatsu-ku, Kawasaki-shi, 213

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 11A期

关键词：

INGAAS; SURFACE-EMITTING LASERS; SPONTANEOUS EMISSION; TRANSVERSE MODE; GAIN OFFSET; RESONANT MODE; GAIN PEAK;

D O I：

10.1143/JJAP.32.L1612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated InGaAs/GaAs vertical-cavity surface-emitting lasers with modulation-doped graded distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD). The threshold current was 3.2 mA. By observing the spontaneous emission through DBRs, we found that transverse mode behavior depends on gain characteristics. Single fundamental transverse-mode lasing is achieved at a negative gain offset and multiple transverse-mode lasing is achieved at a positive gain offset.

引用

页码：L1612 / L1614

页数：3

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