Femtosecond carrier dynamics in low-temperature grown Ga0.51In0.49P

被引：14

作者：

Kostoulas, Y

Ucer, KB

Wicks, GW

Fauchet, PM

机构：

[1] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY 14627

[2] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14627

[3] UNIV ROCHESTER,INST OPT,DEPT ELECT ENGN,ROCHESTER,NY 14627

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pump-probe spectroscopy is used to determine the dynamics of carriers in thin films of Ga0.51In0.49P grown at temperatures of 500, 300, and 200 degrees C. The carrier trapping time tau(tr), is found to be similar to 0.2 ps for the 200 degrees C sample and similar to 0.9 ps for the 300 degrees C sample. Annealing of the 200 degrees C sample at 450 degrees C for 10 min causes the optical response to slow appreciably (tau(tr)similar to 0.7 ps), indicating that the point defects are directly responsible for the ultrashort optical response observed in this material. (C) 1995 American Institute of Physics.

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页码：3756 / 3758

页数：3

相关论文

共 14 条

[1] FEMTOSECOND RELAXATION OF CARRIERS GENERATED BY NEAR-BAND-GAP OPTICAL-EXCITATION IN COMPOUND SEMICONDUCTORS [J].

BAIR, JE ;

COHEN, D ;

KRUSIUS, JP ;

POLLOCK, CR .

PHYSICAL REVIEW B, 1994, 50 (07) :4355-4370

[2] PHOSPHORUS ANTISITE DEFECTS IN LOW-TEMPERATURE INP [J].

DRESZER, P ;

CHEN, WM ;

SEENDRIPU, K ;

WOLK, JA ;

WALUKIEWICZ, W ;

LIANG, BW ;

TU, CW ;

WEBER, ER .

PHYSICAL REVIEW B, 1993, 47 (07) :4111-4114

[3] HOT-CARRIER COULOMB EFFECTS IN GAAS INVESTIGATED BY FEMTOSECOND SPECTROSCOPY AROUND THE BAND EDGE [J].

GONG, T ;

NIGHAN, WL ;

FAUCHET, PM .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2713-2715

[4] CARRIER LIFETIME VERSUS ANNEAL IN LOW-TEMPERATURE GROWTH GAAS [J].

HARMON, ES ;

MELLOCH, MR ;

WOODALL, JM ;

NOLTE, DD ;

OTSUKA, N ;

CHANG, CL .

APPLIED PHYSICS LETTERS, 1993, 63 (16) :2248-2250

[5] HIGH-RESISTIVITY LT-IN(0.47)GA(0.53)P GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

HE, Y ;

RAMDANI, J ;

ELMASRY, NA ;

LOOK, DC ;

BEDAIR, SM .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (12) :1481-1485

[6] DETERMINATION OF THE TOTAL EMITTANCE OF NORMAL-TYPE GAAS WITH APPLICATION TO CZOCHRALSKI GROWTH [J].

JORDAN, AS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2218-2227

[7] FEMTOSECOND CARRIER DYNAMICS IN LOW-TEMPERATURE-GROWN INDIUM-PHOSPHIDE [J].

KOSTOULAS, Y ;

WAXER, LJ ;

WALMSLEY, IA ;

WICKS, GW ;

FAUCHET, PM .

APPLIED PHYSICS LETTERS, 1995, 66 (14) :1821-1823

[8] INVESTIGATION OF CARRIER-CARRIER SCATTERING BY 3-PULSE PUMP-PROBE SPECTROSCOPY [J].

KOSTOULAS, Y ;

GONG, T ;

FAUCHET, PM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) :462-464

[9] SEMIINSULATING NATURE OF GAS-SOURCE MOLECULAR-BEAM EPITAXIAL INGAP GROWN AT VERY-LOW TEMPERATURES [J].

LOOK, DC ;

HE, Y ;

RAMDANI, J ;

ELMASRY, N ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1993, 63 (09) :1231-1233

[10]

SMITH FW, 1992, MATER RES SOC SYMP P, V241, P3