POSITRON-ANNIHILATION AND PROFILES OF DISPLACED ATOMS IN ELECTRON-IRRADIATED GE

被引：5

作者：

POGREBNYAK, AD

KUZMINIKH, VA

AREFIEV, KP

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1982年 / 112卷 / 02期

关键词：

D O I：

10.1002/pssb.2221120247

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K79 / K83

页数：5

共 9 条

[1]

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[2]

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DEAN, GW ;

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HOGG, BG .

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[4] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

FUHS, W ;

HOLZHAUER, U ;

MANTL, S ;

RICHTER, FW ;

STURM, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (01) :69-75

[5]

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[6] POSITRON-ANNIHILATION AND POSITRON PROFILES IN SI, IRRADIATED BY SUPER DENSE ELECTRON PULSES [J].

POGREBNYAK, AD ;

KUZMINIKH, VA ;

RASZOV, VI ;

RUDNEV, AS .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (02) :K79-K82

[7] POSITRON PROFILES AND POSITRON-ANNIHILATION IN THIN-LAYERS [J].

POGREBNYAK, AD ;

KUZMINIKH, VA ;

AREFEV, KP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :145-151

[8]

SMIRNOV LS, 1980, QUESTIONS SEMICONDUC

[9]

Stas' V. F., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1369

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