A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA-HIGH VACUUM

被引：20

作者：

THOMAS, RN

FRANCOMBE, MH

机构：

来源：

关键词：

D O I：

10.1063/1.1755065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：134 / +

页数：1

共 8 条

[1]

ANDERSON JC, 1966, USE THIN FILMS PH ED, P187

BOOKER, GR ;

UNVALA, BA .

PHILOSOPHICAL MAGAZINE, 1965, 11 (109) :11-&

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

[4]

FRANCOMBE MH, 1963, SINGLE CRYSTAL FI ED, P251

[5]

MENDELSON S, 1963, SINGLE CRYSTAL FILMS, P251

[6]

RHODIN TN, 1966, USE THIN FILMS PHYSI, P187

[7] A LEED STUDY OF HOMOEPITAXIAL GROWTH OF THICK SILICON FILMS [J].

THOMAS, RN ;

FRANCOMBE, MH .

WIDMER, H .